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Single-Shot Time-Domain Studies of Spin-Torque-Driven Switching in Magnetic Tunnel Junctions

Y.-T. Cui, G. Finocchio, C. Wang, J. A. Katine, R. A. Buhrman, and D. C. Ralph
Phys. Rev. Lett. 104, 097201 – Published 1 March 2010
Physics logo See Viewpoint: Taking advantage of nature for a greener nonvolatile memory

Abstract

We report single-shot measurements of resistance versus time for thermally assisted spin-torque switching in magnetic tunnel junctions. We achieve the sensitivity to resolve the magnetic dynamics prior to as well as during switching, yielding detailed views of switching modes and variations between events. Analyses of individual traces allow measurements of coherence times, nonequilibrium excitation spectra, and variations in magnetization precession amplitude. We find that with a small in-plane hard-axis magnetic field the switching dynamics are more spatially coherent than for a zero field.

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  • Received 11 June 2009

DOI:https://doi.org/10.1103/PhysRevLett.104.097201

©2010 American Physical Society

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Taking advantage of nature for a greener nonvolatile memory

Published 1 March 2010

Thermal magnetic fluctuations, usually thought of as a barrier to magnetic information storage and processing, can be harnessed to make green, low-energy magnetic applications a possibility.

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Authors & Affiliations

Y.-T. Cui1, G. Finocchio2, C. Wang1, J. A. Katine3, R. A. Buhrman1, and D. C. Ralph1

  • 1Cornell University, Ithaca, New York 14853, USA
  • 2Dipartimento di Fisica della Materia e Ingegneria Elettronica, University of Messina, Salita Sperone 31, 98166 Messina, Italy
  • 3Hitachi Global Storage Technologies, San Jose, California 95135 USA

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Issue

Vol. 104, Iss. 9 — 5 March 2010

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