Abstract
Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.
- Received 2 December 2008
DOI:https://doi.org/10.1103/PhysRevLett.103.023601
©2009 American Physical Society