Beating of Exciton-Dressed States in a Single Semiconductor InGaAs/GaAs Quantum Dot

S. J. Boyle, A. J. Ramsay, A. M. Fox, M. S. Skolnick, A. P. Heberle, and M. Hopkinson
Phys. Rev. Lett. 102, 207401 – Published 20 May 2009

Abstract

We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 8 October 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.207401

©2009 American Physical Society

Authors & Affiliations

S. J. Boyle, A. J. Ramsay*, A. M. Fox, and M. S. Skolnick

  • Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom

A. P. Heberle

  • Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA and Sullivan Park R&D Center, Corning Incorporated, Corning, New York, 14831, USA

M. Hopkinson

  • Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, United Kingdom

  • *a.j.ramsay@shef.ac.uk

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 102, Iss. 20 — 22 May 2009

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×