Metal-Insulator Transition by Isovalent Anion Substitution in Ga1xMnxAs: Implications to Ferromagnetism

P. R. Stone, K. Alberi, S. K. Z. Tardif, J. W. Beeman, K. M. Yu, W. Walukiewicz, and O. D. Dubon
Phys. Rev. Lett. 101, 087203 – Published 20 August 2008

Abstract

We have investigated the effect of partial isovalent anion substitution in Ga1xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice.

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  • Received 7 February 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.087203

©2008 American Physical Society

Authors & Affiliations

P. R. Stone1,2,*, K. Alberi1,2, S. K. Z. Tardif2,†, J. W. Beeman2, K. M. Yu2, W. Walukiewicz2, and O. D. Dubon1,2,‡

  • 1Department of Materials Science & Engineering, University of California, Berkeley, California 94720, USA
  • 2Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *prstone@berkeley.edu
  • Current address: Institut Néel, CNRS, BP 166, 38042 Grenoble Cedex 9, France.
  • oddubon@berkeley.edu

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Vol. 101, Iss. 8 — 22 August 2008

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