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Rashba Effect in the Graphene/Ni(111) System

Yu. S. Dedkov, M. Fonin, U. Rüdiger, and C. Laubschat
Phys. Rev. Lett. 100, 107602 – Published 12 March 2008

Abstract

We report on angle-resolved photoemission studies of the electronic π states of high-quality epitaxial graphene layers on a Ni(111) surface. In this system the electron binding energy of the π states shows a strong dependence on the magnetization reversal of the Ni film. The observed extraordinarily large energy shift up to 225 meV of the graphene-derived π band peak position for opposite magnetization directions is attributed to a manifestation of the Rashba interaction between spin-polarized electrons in the π band and the large effective electric field at the graphene/Ni interface. Our findings show that an electron spin in the graphene layer can be manipulated in a controlled way and have important implications for graphene-based spintronic devices.

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  • Received 17 December 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.107602

©2008 American Physical Society

Authors & Affiliations

Yu. S. Dedkov1,*, M. Fonin2, U. Rüdiger2, and C. Laubschat1

  • 1Institut für Festkörperphysik, Technische Universität Dresden, 01062 Dresden, Germany
  • 2Fachbereich Physik, Universität Konstanz, 78457 Konstanz, Germany

  • *Corresponding author. dedkov@physik.phy.tu-dresden.de

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Issue

Vol. 100, Iss. 10 — 14 March 2008

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