Strain-Induced Fermi Contour Anisotropy of GaAs 2D holes

J. Shabani, M. Shayegan, and R. Winkler
Phys. Rev. Lett. 100, 096803 – Published 7 March 2008

Abstract

We report measurements of magnetoresistance commensurability peaks, induced by a square array of antidots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.

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  • Received 6 September 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.096803

©2008 American Physical Society

Authors & Affiliations

J. Shabani1, M. Shayegan1, and R. Winkler2

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 2Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

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Issue

Vol. 100, Iss. 9 — 7 March 2008

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