Abstract
A phase-separation instability, resulting in the dewetting of thin films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial islands and Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of Sr-reconstructed Si and Sr-deficient , in correspondence with the observed islanding.
- Received 19 September 2007
- Corrected 23 January 2008
DOI:https://doi.org/10.1103/PhysRevLett.100.036101
©2008 American Physical Society
Corrections
23 January 2008