Smoothening in thin-film deposition on rough substrates

T. A. de Assis and F. D. A. Aarão Reis
Phys. Rev. E 92, 052405 – Published 24 November 2015

Abstract

The evolution of the surface roughness W of a thin film deposited on a rough substrate is studied with a model of temperature-activated adatom diffusion, irreversible lateral aggregation, and no step energy barrier, in which the main parameter is the ratio R of diffusion and deposition rates. At sufficiently low temperatures (R10), the average number of adatom steps after adsorption is very small, thus W monotonically increases with time t due to an approximately uncorrelated deposition at short times. If the temperature is not very low (R103 or larger), smoothening occurs at short times and the Villain-Lai-Das Sarma (VLDS) growth equation governs the long time roughening, which is attained after a crossover time tc that increases with the correlation length ξi of the substrate. Scaling arguments predict the dependence of tc on temperature and on the substrate production time and the scaling relation for the difference between the roughness of films deposited on rough and flat substrates, in good agreement with numerical results. The effect of temperature is not a direct extension of previous results on flat substrates because the short wavelength fluctuations delay the formation of terraces. For this reason, the effective energy obtained from the dependence of tc on R is 40% of the energy of activated adatom diffusion. A scaling law for the initial smoothening is proposed as W/Wi=Ψt/tc1, with a crossover time tc1Rθξiz, where Wi is the substrate roughness, θ0.4, and z is the VLDS dynamical exponent. It provides good data collapse if W is not very small and is suggested to be tested experimentally.

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  • Received 25 August 2015

DOI:https://doi.org/10.1103/PhysRevE.92.052405

©2015 American Physical Society

Authors & Affiliations

T. A. de Assis1,* and F. D. A. Aarão Reis2,†

  • 1Instituto de Física, Universidade Federal da Bahia, Campus Universitário da Federação, Rua Barão de Jeremoabo s/n, 40170-115, Salvador, BA, Brazil
  • 2Instituto de Física, Universidade Federal Fluminense, Avenida Litorânea s/n, 24210-340 Niterói RJ, Brazil

  • *thiagoaa@ufba.br
  • reis@if.uff.br

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Vol. 92, Iss. 5 — November 2015

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