Abstract
Bulk alloys present a strong sensitivity of the magnetostrictive properties with Ga content with maximum magnetostriction near . Here, we present magnetoelastic coefficients measured by the cantilever method on thin films grown by molecular beam epitaxy on GaAs(001). We find that Ga-dependent magnetoelastic coefficients in nanometer thin films are comparable in magnitude to the respective bulk values. Moreover, we compare thin films with a tetragonal structure due to a slightly preferential alignment of Ga pairs along the growth direction with and a cubic structure. It turns out that magnetoelastic coefficients are unaffected by a preferential alignment of Ga pairs along the growth direction.
- Received 25 March 2019
DOI:https://doi.org/10.1103/PhysRevB.99.134432
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