Ionic and electronic properties of the topological insulator Bi2Te2Se investigated via β-detected nuclear magnetic relaxation and resonance of Li8

Ryan M. L. McFadden, Aris Chatzichristos, Kim H. Chow, David L. Cortie, Martin H. Dehn, Derek Fujimoto, Masrur D. Hossain, Huiwen Ji, Victoria L. Karner, Robert F. Kiefl, C. D. Philip Levy, Ruohong Li, Iain McKenzie, Gerald D. Morris, Oren Ofer, Matthew R. Pearson, Monika Stachura, Robert J. Cava, and W. Andrew MacFarlane
Phys. Rev. B 99, 125201 – Published 8 March 2019

Abstract

We report measurements on the high-temperature ionic and low-temperature electronic properties of the three-dimensional topological insulator Bi2Te2Se using ion-implanted Li8β-detected nuclear magnetic relaxation and resonance. With implantation energies in the range 528keV, the probes penetrate beyond the expected range of the topological surface state, but are still within 250nm of the surface. At temperatures above 150K, spin-lattice relaxation measurements reveal isolated Li+8 diffusion with an activation energy EA=0.185(8)eV and attempt frequency τ01=8±3×1011s1 for atomic site-to-site hopping. At lower temperature, we find a linear Korringa-type relaxation mechanism with a field-dependent slope and intercept, which is accompanied by an anomalous field dependence to the resonance shift. We suggest that these may be related to a strong contribution from orbital currents or the magnetic freeze-out of charge carriers in this heavily compensated semiconductor, but that conventional theories are unable to account for the extent of the field dependence. Conventional NMR of the stable host nuclei may help elucidate their origin.

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  • Received 26 October 2018
  • Revised 15 February 2019

DOI:https://doi.org/10.1103/PhysRevB.99.125201

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ryan M. L. McFadden1,2,*, Aris Chatzichristos2,3, Kim H. Chow4, David L. Cortie1,2,3,†, Martin H. Dehn2,3, Derek Fujimoto2,3, Masrur D. Hossain3,‡, Huiwen Ji5,§, Victoria L. Karner1,2, Robert F. Kiefl2,3,6, C. D. Philip Levy6, Ruohong Li6, Iain McKenzie6,7, Gerald D. Morris6, Oren Ofer6, Matthew R. Pearson6, Monika Stachura6, Robert J. Cava5, and W. Andrew MacFarlane1,2,6,∥

  • 1Department of Chemistry, University of British Columbia, Vancouver, BC, Canada V6T 1Z4
  • 2Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, BC, Canada V6T 1Z4
  • 3Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z1
  • 4Department of Physics, University of Alberta, Edmonton, AB, Canada T6G 2E1
  • 5Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA
  • 6TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3
  • 7Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6

  • *rmlm@chem.ubc.ca
  • Current address: Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, North Wollongong, NSW 2500, Australia.
  • Current address: ASML US, Inc, 399 W Trimble Rd, San Jose, CA 95131, USA.
  • §Current address: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
  • wam@chem.ubc.ca

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Issue

Vol. 99, Iss. 12 — 15 March 2019

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