Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve

Soobeom Lee, Fabien Rortais, Ryo Ohshima, Yuichiro Ando, Shinji Miwa, Yoshishige Suzuki, Hayato Koike, and Masashi Shiraishi
Phys. Rev. B 99, 064408 – Published 11 February 2019
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Abstract

The dependence of the spin accumulation voltage on the electric bias current for a nondegenerate Si-based spin valve was quantitatively investigated using both experiments and calculations. We attempted to clarify the reason for the disagreement between the experimentally measured values and those calculated using the spin drift-diffusion equation that takes into account the effect of the spin-dependent interfacial resistance of tunneling barriers, which is an important question in semiconductor spintronics. Unlike the case of metallic spin valves, it was found that the bias dependence of the resistance-area product for the ferromagnet/MgO/Si interface causes a conductance mismatch, and this plays a central role in producing the deviation between the experimental and numerical results.

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  • Received 14 October 2018

DOI:https://doi.org/10.1103/PhysRevB.99.064408

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Soobeom Lee1, Fabien Rortais1, Ryo Ohshima1, Yuichiro Ando1,*, Shinji Miwa2,†, Yoshishige Suzuki2, Hayato Koike3, and Masashi Shiraishi1,‡

  • 1Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
  • 2Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
  • 3Advanced Products Development Center, TDK Corporation, Ichikawa, Chiba 272-8558, Japan

  • *ando@kuee.kyoto-u.ac.jp
  • Present address: Institute for Solid State Physics, The University of Tokyo, Kashiwa 277-8581, Japan.
  • mshiraishi@kuee.kyoto-u.ac.jp

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Issue

Vol. 99, Iss. 6 — 1 February 2019

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