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Topological superconductivity of spin-3/2 carriers in a three-dimensional doped Luttinger semimetal

Bitan Roy, Sayed Ali Akbar Ghorashi, Matthew S. Foster, and Andriy H. Nevidomskyy
Phys. Rev. B 99, 054505 – Published 13 February 2019

Abstract

We investigate topological Cooper pairing, including gapless Weyl and fully gapped class DIII superconductivity, in a three-dimensional doped Luttinger semimetal. The latter describes effective spin-3/2 carriers near a quadratic band touching and captures the normal-state properties of the 227 pyrochlore iridates and half-Heusler alloys. Electron-electron interactions may favor non-s-wave pairing in such systems, including even-parity d-wave pairing. We argue that the lowest energy d-wave pairings are always of complex (e.g., d+id) type, with nodal Weyl quasiparticles. This implies ϱ(E)|E|2 scaling of the density of states (DoS) at low energies in the clean limit or ϱ(E)|E| over a wide critical region in the presence of disorder. The latter is consistent with the T dependence of the penetration depth in the half-Heusler compound YPtBi. We enumerate routes for experimental verification, including specific heat, thermal conductivity, NMR relaxation time, and topological Fermi arcs. Nucleation of any d-wave pairing also causes a small lattice distortion and induces an s-wave component; this gives a route to strain-engineer exotic s+d pairings. We also consider odd-parity, fully gapped p-wave superconductivity. For hole doping, a gapless Majorana fluid with cubic dispersion appears at the surface. We invent a generalized surface model with ν-fold dispersion to simulate a bulk with winding number ν. Using exact diagonalization, we show that disorder drives the surface into a critically delocalized phase, with universal DoS and multifractal scaling consistent with the conformal field theory (CFT) SO(n)ν, where n0 counts replicas. This is contrary to the naive expectation of a surface thermal metal, and implies that the topology tunes the surface renormalization group to the CFT in the presence of disorder.

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  • Received 15 September 2017
  • Revised 9 January 2019

DOI:https://doi.org/10.1103/PhysRevB.99.054505

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Bitan Roy1,2, Sayed Ali Akbar Ghorashi3,4, Matthew S. Foster1,5, and Andriy H. Nevidomskyy1,5

  • 1Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA
  • 2Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Stra. 38, 01187 Dresden, Germany
  • 3Department of Physics, William & Mary, Williamsburg, Virginia 23187, USA
  • 4Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, Texas 77204, USA
  • 5Rice Center for Quantum Materials, Rice University, Houston, Texas 77005, USA

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Issue

Vol. 99, Iss. 5 — 1 February 2019

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