Pressure-induced charge density wave phase in Ag2δTe

Yongsheng Zhao, Wenge Yang, Harold S. Schnyders, Anke Husmann, Ganghua Zhang, Yang Ren, David L. Price, Ho-Kwang Mao, and Marie-Louise Saboungi
Phys. Rev. B 98, 205126 – Published 15 November 2018

Abstract

Considerable excitement was generated by the observation of large and linear positive magnetoresistance in nonmagnetic silver chalcogenides. Renewed interest in these materials was kindled by the discovery that Ag2Te in particular is a topological insulator with gapless linear Dirac-type surface states. High-pressure x-ray-diffraction studies, combined with first-principles electronic structure calculations, have identified three phase transitions as the pressure is increased: an isostructural transition identified with an electronic topological transition followed by two structural phase transitions. These recent studies were carried out on nominally stoichiometric Ag2Te. For the present work we have prepared single-phase self-doped Ag2δTe samples with a well-characterized silver deficit (δ=2.0×104) for structural and electrical transport measurements over extended ranges of pressure (0–43 GPa), temperature (2–300 K), and magnetic field (0–9 T). The temperature dependence of the resistivity exhibits anomalous behavior at 2.3 GPa, slightly above the isostructural transition, which we postulate is due to Fermi surface reconstruction associated with a charge density wave (CDW) phase. The anomaly is enhanced by the application of a 9-T magnetic field and shifted to higher temperature, implying that the electronic Zeeman energy is sufficient to alter the gapping of the Fermi surface. A peak in the pressure dependence of the resistivity and a sudden drop in the pressure dependence of the mobility, occurring at 2.3 GPa, provide additional evidence for a CDW phase at pressures slightly above the isostructural transition.

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  • Received 1 April 2018

DOI:https://doi.org/10.1103/PhysRevB.98.205126

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yongsheng Zhao1, Wenge Yang1,*, Harold S. Schnyders2, Anke Husmann3, Ganghua Zhang1, Yang Ren4, David L. Price5, Ho-Kwang Mao1,6, and Marie-Louise Saboungi7,†

  • 1Center for High Pressure Science and Technology Advanced Research (HPSTAR), 1690 Cailun Road, Shanghai 201203, People's Republic of China
  • 2Physics Department, Grand Valley State University, Allendale, Michigan 49401, USA
  • 3Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
  • 4X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439, USA
  • 5CEMHTI, UPR 3079 CNRS - Université d'Orléans, 1d Avenue de la Recherche Scientifique, 45071 Orléans Cedex 2, France
  • 6Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015, USA
  • 7IMPMC, UMR 7590 CNRS - Sorbonne Université, Campus Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris Cedex 5, France

  • *yangwg@hpstar.ac.cn
  • marie-louise.saboungi@sorbonne-universite.fr

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Issue

Vol. 98, Iss. 20 — 15 November 2018

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