Shear instability in twisted bilayer graphene

Xianqing Lin, Dan Liu, and David Tománek
Phys. Rev. B 98, 195432 – Published 21 November 2018

Abstract

In twisted bilayer graphene (TBLG), extremely small deviations from the magic twist angle θm1.08 change its electronic structure near the Fermi level drastically, causing a meV-wide flat band to appear or disappear. In view of such sensitivity to minute structural deformations, we investigate the combined effect of shear and atomic relaxation on the electronic structure. Using precise experimental data for monolayer and bilayer graphene as input in a simplified formalism for the electronic structure and elastic energy, we find TBLG near θm to be unstable with respect to global shear by the angle α0.08. In TBLG, the effect of shear on the electronic structure is as important as that of atomic relaxation. Under optimum global shear, calculated θm is reduced by 0.04 and agrees with the observed value.

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  • Received 1 September 2018

DOI:https://doi.org/10.1103/PhysRevB.98.195432

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xianqing Lin1,2, Dan Liu1, and David Tománek1,*

  • 1Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA
  • 2College of Science, Zhejiang University of Technology, Hangzhou 310023, China

  • *tomanek@pa.msu.edu

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Issue

Vol. 98, Iss. 19 — 15 November 2018

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