Excitation properties of the divacancy in 4H-SiC

Björn Magnusson, Nguyen Tien Son, András Csóré, Andreas Gällström, Takeshi Ohshima, Adam Gali, and Ivan G. Ivanov
Phys. Rev. B 98, 195202 – Published 5 November 2018
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Abstract

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbor silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in 4H-SiC. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/−) level with respect to the conduction band for each divacancy configuration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally observed decay curves.

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  • Received 23 May 2018
  • Revised 18 September 2018

DOI:https://doi.org/10.1103/PhysRevB.98.195202

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Björn Magnusson1,2, Nguyen Tien Son1, András Csóré3, Andreas Gällström4, Takeshi Ohshima5, Adam Gali3,6, and Ivan G. Ivanov1

  • 1Linköping University, Department of Physics, Chemistry and Biology, S-581 83 Linköping, Sweden
  • 2Norstel AB, Ramshällsvägen 15, SE-602 38 Norrköping, Sweden
  • 3Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út. 8, H-1111, Hungary
  • 4Saab Dynamics AB, SE-581-88 Linköping, Sweden
  • 5National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
  • 6Wigner Research Center for Physics, Hungarian Academy of Sciences, PO. Box 49, H-1525, Hungary

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Issue

Vol. 98, Iss. 19 — 15 November 2018

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