Correlation-driven Lifshitz transition in electron-doped iron selenides (Li,Fe)OHFeSe

Da-Yong Liu, Zhe Sun, Feng Lu, Wei-Hua Wang, and Liang-Jian Zou
Phys. Rev. B 98, 195137 – Published 26 November 2018

Abstract

Effects of electronic correlation and spin-orbit coupling (SOC) on electronic structure of iron selenides (Li1xFex)OHFeSe have been investigated with the combination of density functional theory (DFT) and dynamical mean-field theory. It is found that the electronic correlation substantially changes the Fermi surface topology for x=0.2, resulting in a tiny electron pocket around the zone center Γ and two large electron pockets around the zone corner M, respectively. Moreover, the SOC also considerably affects the low-energy electronic structure near the Fermi level, especially inducing a gap in the Dirac-like dispersion around Γ for x=0.2. Our calculations show a correlation-driven Lifshitz transition from FeSe to the heavily electron-doped compound, leading to a transition of the nesting wave vector from (π, 0) to (π, 0.5π±δ) accompanied by an orbital-weight redistribution between the dxy and dxz/dyz orbitals. These correlation-driven electronic structures enrich the understanding of different DFT and experimental results, suggesting a quite distinct superconducting state of (Li0.8Fe0.2)OHFeSe in comparison with FeSe.

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  • Received 10 April 2018
  • Revised 17 September 2018

DOI:https://doi.org/10.1103/PhysRevB.98.195137

©2018 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Techniques
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Da-Yong Liu1,*, Zhe Sun2, Feng Lu3, Wei-Hua Wang3, and Liang-Jian Zou1

  • 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei, Anhui 230031, People's Republic of China
  • 2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
  • 3Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, People's Republic of China

  • *dyliu@theory.issp.ac.cn

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Vol. 98, Iss. 19 — 15 November 2018

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