Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

G. M. Christian, S. Schulz, M. J. Kappers, C. J. Humphreys, R. A. Oliver, and P. Dawson
Phys. Rev. B 98, 155301 – Published 2 October 2018

Abstract

In this paper we report on the emergence of a high energy band at high optically excited carrier densities in the low temperature photoluminescence spectra from polar InGaN/GaN single quantum well structures. This high energy band emerges at carrier densities when the emission from the localized ground states begins to saturate. We attribute this high energy band to recombination involving higher energy less strongly localized electron and hole states that are populated once the localized ground states become saturated; this assignment is supported by the results from an atomistic tight-binding model. A particular characteristic of the recombination at the high carrier densities is that the overall forms of the photoluminescence decay curves bear great similarity to those from semiconductor quantum dots. The decay curves consist of plateaus where the photoluminescence intensity is constant with time as a result of Pauli state blocking in the high energy localized states followed by a rapid decrease in intensity once the carrier density is sufficiently low that the states involved are no longer saturated.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 30 May 2018

DOI:https://doi.org/10.1103/PhysRevB.98.155301

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

G. M. Christian1,*, S. Schulz2, M. J. Kappers3, C. J. Humphreys3,4, R. A. Oliver3, and P. Dawson1

  • 1School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
  • 2Photonics Theory Group, Tyndall National Institute, University College Cork, Cork, T12 R5CP, Ireland
  • 3Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge, CB3 0FS, United Kingdom
  • 4School of Engineering and Materials Science, Queen Mary University of London, London, E1 4NS, United Kingdom

  • *george.christian@manchester.ac.uk

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 98, Iss. 15 — 15 October 2018

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×