Abstract
We investigate theoretically the dynamical conductivity in the nodal-line semimetal ZrSiS by using a multi-orbital tight-binding model based on a first-principles band calculation. We find that the dynamical conductivity in the clean limit is not frequency independent unlike the ideal Dirac model, while the nearly flat dependence on frequency is achieved by introducing the disorder-induced energy broadening. The result also applies to similar compounds such as ZrSiSe, ZrSiTe, and HfSiS.
1 More- Received 11 June 2018
DOI:https://doi.org/10.1103/PhysRevB.98.125201
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