Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Stefan Wilfert, Paolo Sessi, Zhiwei Wang, Henrik Schmidt, M. Carmen Martínez-Velarte, Seng Huat Lee, Yew San Hor, Alexander F. Otte, Yoichi Ando, Weida Wu, and Matthias Bode
Phys. Rev. B 98, 085133 – Published 20 August 2018

Abstract

Recently, the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy and spectroscopy experiments performed on Tl-doped Bi2Te3, a three-dimensional topological insulator which becomes superconducting in the bulk at TC=2.3 K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy ED=(118±1) meV and a Dirac velocity vD=(4.7±0.1)×105 m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both TC and μ0HC strongly deviate from the corresponding bulk values. Furthermore, in spite of a critical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is caused only by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi2Se3. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

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  • Received 27 May 2018

DOI:https://doi.org/10.1103/PhysRevB.98.085133

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Stefan Wilfert1,*, Paolo Sessi1, Zhiwei Wang2, Henrik Schmidt1, M. Carmen Martínez-Velarte3, Seng Huat Lee4,†, Yew San Hor4, Alexander F. Otte3, Yoichi Ando2, Weida Wu1,5, and Matthias Bode1,6

  • 1Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
  • 2Physics Institute II, University of Cologne, 50937 Cologne, Germany
  • 3Department of Quantum Nanoscience, Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
  • 4Department of Physics, Missouri University of Science and Technology, Rolla, Missouri 65409, USA
  • 5Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
  • 6Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

  • *Corresponding author: swilfert@physik.uni-wuerzburg.de
  • Present address: 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA.

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Issue

Vol. 98, Iss. 8 — 15 August 2018

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