Structural, vibrational, and electronic properties of single-layer hexagonal crystals of group IV and V elements

Burak Özdamar, Gözde Özbal, M. Neşet Çınar, Koray Sevim, Gizem Kurt, Birnur Kaya, and Hâldun Sevinçli
Phys. Rev. B 98, 045431 – Published 27 July 2018
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Abstract

Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula A2B2, where A and B belong to groups IV and V, respectively (A=C, Si, Ge, Sn, Pb; B=N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices P6¯m2 and P3¯m1 are shown to be dynamically stable, named as α- and β -phases correspondingly. Both phases have similar cohesive energies, and the α phase is found to be energetically favorable for structures except CP, CAs, CSb, and CBi, for which the β phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi, and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a mexican-hat shape. SnAs and PbAs have purely quartic valence band edges, i.e., Eαk4, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications.

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  • Received 2 May 2018

DOI:https://doi.org/10.1103/PhysRevB.98.045431

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Burak Özdamar1, Gözde Özbal2, M. Neşet Çınar1, Koray Sevim2, Gizem Kurt1, Birnur Kaya1, and Hâldun Sevinçli1,*

  • 1Izmir Institute of Technology, Department of Materials Science and Engineering, 35430 Urla, Izmir, Turkey
  • 2Izmir Institute of Technology, Department of Physics, 35430 Urla, Izmir, Turkey

  • *haldunsevincli@iyte.edu.tr

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Issue

Vol. 98, Iss. 4 — 15 July 2018

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