Tunable Berry curvature and valley and spin Hall effect in bilayer MoS2

Andor Kormányos, Viktor Zólyomi, Vladimir I. Fal'ko, and Guido Burkard
Phys. Rev. B 98, 035408 – Published 5 July 2018

Abstract

The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intralayer and interlayer couplings give important contributions to the Berry curvature in the K and K valleys of the Brillouin zone. The interlayer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the interlayer contribution, the Berry curvature becomes highly tunable in double gated devices. We study the dependence of the valley Hall and spin Hall effects on the stacking type and external electric field. Although the valley and spin Hall conductivities are not quantized, in MoS22H bilayers, they may change sign as a function of the external electric field, which is reminiscent of the behavior of lattice Chern insulators.

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  • Received 2 April 2018
  • Revised 19 June 2018

DOI:https://doi.org/10.1103/PhysRevB.98.035408

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Andor Kormányos1,*, Viktor Zólyomi2, Vladimir I. Fal'ko2, and Guido Burkard1

  • 1Department of Physics, University of Konstanz, D-78464 Konstanz, Germany
  • 2School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom

  • *andor.kormanyos@uni-konstanz.de

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Issue

Vol. 98, Iss. 3 — 15 July 2018

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