Abstract
We investigated the electronic structure of a layered perovskite oxyfluoride thin film by hard x-ray photoemission spectroscopy (HAXPES) and soft x-ray absorption spectroscopy (XAS) as well as density functional theory (DFT)-based calculations. The core-level HAXPES spectra suggested that is a Mott insulator. The DFT calculations described the total and site-projected density of states and the band dispersion for the optimized crystal structure of , predicting that takes a high-spin configuration of and that has an indirect band gap of 0.7 eV with minima at the and points. HAXPES spectra near the Fermi level and the angular-dependent O XAS spectra of the thin film, corresponding to the valence band and conduction band density of states, respectively, were drastically different compared to those of the film, suggesting that the changes in the electronic states were mainly driven by the substitution of an oxygen atom coordinated to Ru by fluorine and subsequent modification of the crystal field.
2 More- Received 14 September 2017
- Revised 29 March 2018
DOI:https://doi.org/10.1103/PhysRevB.97.235101
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