Two- to three-dimensional crossover in a dense electron liquid in silicon

Guy Matmon, Eran Ginossar, Byron J. Villis, Alex Kölker, Tingbin Lim, Hari Solanki, Steven R. Schofield, Neil J. Curson, Juerong Li, Ben N. Murdin, Andrew J. Fisher, and Gabriel Aeppli
Phys. Rev. B 97, 155306 – Published 23 April 2018

Abstract

Doping of silicon via phosphine exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns=2.8×1014 cm2) disordered two-dimensional array of P atoms, the full field magnitude and angle-dependent magnetotransport is remarkably well described by classic weak localization theory with no corrections due to interaction. The two- to three-dimensional crossover seen upon warming can also be interpreted using scaling concepts developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

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  • Received 14 February 2018

DOI:https://doi.org/10.1103/PhysRevB.97.155306

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Guy Matmon1,*, Eran Ginossar2, Byron J. Villis1, Alex Kölker1, Tingbin Lim1, Hari Solanki1, Steven R. Schofield1, Neil J. Curson1, Juerong Li2, Ben N. Murdin2, Andrew J. Fisher1, and Gabriel Aeppli3

  • 1London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
  • 2Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom
  • 3Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Department of Physics, ETH Zürich, 8093 Zürich, and Paul Scherrer Institute, 5232 Villigen, Switzerland

  • *g.matmon@ucl.ac.uk

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Issue

Vol. 97, Iss. 15 — 15 April 2018

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