Abstract
When a impurity is embedded in a semiconductor structure, crystal strain strongly influences the zero-field splitting between states with spin projection and . Experimental evidence of this effect has been given in previous studies; however, direct measurement of the strain-induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of an individual ion in an epitaxial CdTe quantum dot in a ZnTe barrier. Using partially allowed optical transitions, we measure the strain-induced zero-field splitting of the ion directly in the excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of and spin states in a magnetic field, we determine the axial and in-plane components of the crystal field acting on the . The proposed technique can be applied to optical determination of the zero-field splitting of other transition-metal ions in quantum dots.
- Received 24 October 2016
DOI:https://doi.org/10.1103/PhysRevB.97.045305
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