Topological interface states in the natural heterostructure (PbSe)5(Bi2Se3)6 with BiPb defects

Hiroyoshi Momida, Gustav Bihlmayer, Stefan Blügel, Kouji Segawa, Yoichi Ando, and Tamio Oguchi
Phys. Rev. B 97, 035113 – Published 9 January 2018

Abstract

We study theoretically the electronic band structure of (PbSe)5(Bi2Se3)6, which consists of an ordinary insulator PbSe and a topological insulator Bi2Se3. The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of Bi2Se3 layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of (BixPb1xSe)5(Bi2Se3)6 with BiPb antisite defects included in the PbSe layers. The result shows that a high density of BiPb defects can exist in real materials, consistent with the experimentally estimated x of more than 30%. The BiPb defects strongly modify the band alignment between Bi2Se3 and PbSe layers, while the topological interface states of Bi2Se3 are kept as a gapped Dirac-cone-like dispersion.

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  • Received 1 October 2017

DOI:https://doi.org/10.1103/PhysRevB.97.035113

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hiroyoshi Momida1,2, Gustav Bihlmayer2, Stefan Blügel2, Kouji Segawa3, Yoichi Ando4, and Tamio Oguchi1

  • 1Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
  • 2Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
  • 3Department of Physics, Kyoto Sangyo University, Kyoto 603-8555, Japan
  • 4Physics Institute II, University of Cologne, Zülpicher Straße 77, 50937 Köln, Germany

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Issue

Vol. 97, Iss. 3 — 15 January 2018

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