Abstract
We study theoretically the electronic band structure of ((), which consists of an ordinary insulator PbSe and a topological insulator . The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of ()() with antisite defects included in the PbSe layers. The result shows that a high density of defects can exist in real materials, consistent with the experimentally estimated of more than 30%. The defects strongly modify the band alignment between and PbSe layers, while the topological interface states of are kept as a gapped Dirac-cone-like dispersion.
- Received 1 October 2017
DOI:https://doi.org/10.1103/PhysRevB.97.035113
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