Field dependence of hopping mobility: Lattice models against spatial disorder

J. O. Oelerich, A. V. Nenashev, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 96, 195208 – Published 21 November 2017

Abstract

The theoretical description of the effect of the electric field F on the hopping mobility μ belongs to the not-yet-resolved problems related to charge transport in disordered materials. An often proposed solution is to simulate hopping transport via sites placed on regular grids and to fit the results by phenomenological equations. This approach currently dominates the theoretical research of hopping transport in organic disordered semiconductors. We show that the dependence μ(F) in the case of regular grids can drastically differ from that in systems with spatial disorder. While μ increases with F on lattices, it can decrease in random systems with the same material parameters. Moreover, the material parameters responsible for the dependence μ(F) on lattices differ from those responsible for μ(F) in spatially disordered systems, which makes lattice models inappropriate for studying the field dependence of the hopping mobility.

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  • Received 16 August 2017
  • Revised 10 October 2017

DOI:https://doi.org/10.1103/PhysRevB.96.195208

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsPolymers & Soft Matter

Authors & Affiliations

J. O. Oelerich1,*, A. V. Nenashev2,3, A. V. Dvurechenskii2,3, F. Gebhard1, and S. D. Baranovskii1

  • 1Department of Physics and Materials Science Center, Philipps-University, D-35032 Marburg, Germany
  • 2Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
  • 3Novosibirsk State University, 630090 Novosibirsk, Russia

  • *jan.oliver.oelerich@physik.uni-marburg.de

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Issue

Vol. 96, Iss. 19 — 15 November 2017

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