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Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide

Viktor Ivády, Joel Davidsson, Nguyen Tien Son, Takeshi Ohshima, Igor A. Abrikosov, and Adam Gali
Phys. Rev. B 96, 161114(R) – Published 27 October 2017
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Abstract

The identification of a microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon-vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett. 115, 247602 (2015)], are still argued as an origin. By means of high-precision first-principles calculations and high-resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room-temperature optical readout.

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  • Received 22 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.161114

©2017 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & Technology

Authors & Affiliations

Viktor Ivády1,2,*, Joel Davidsson1, Nguyen Tien Son1, Takeshi Ohshima3, Igor A. Abrikosov1,4, and Adam Gali2,5,†

  • 1Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
  • 2Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
  • 3National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
  • 4Materials Modeling and Development Laboratory, National University of Science and Technology “MISIS,” 119049 Moscow, Russia
  • 5Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary

  • *vikiv@ifm.liu.se
  • gali.adam@wigner.mta.hu

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Issue

Vol. 96, Iss. 16 — 15 October 2017

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