Ab initio theory of the N2V defect in diamond for quantum memory implementation

Péter Udvarhelyi, Gergő Thiering, Elisa Londero, and Adam Gali
Phys. Rev. B 96, 155211 – Published 30 October 2017

Abstract

The N2V defect in diamond is characterized by means of ab initio methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by N2V defect, i.e., H3 color center in diamond.

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  • Received 25 April 2017
  • Revised 18 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.155211

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Péter Udvarhelyi1,2, Gergő Thiering2,3, Elisa Londero2, and Adam Gali2,3,*

  • 1Loránd Eötvös University, Pázmány Péter Sétány 1/A, H-1117 Budapest, Hungary
  • 2Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary
  • 3Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary

  • *gali.adam@wigner.mta.hu

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Issue

Vol. 96, Iss. 15 — 15 October 2017

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