Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi

N. Stavrias, K. Saeedi, B. Redlich, P. T. Greenland, H. Riemann, N. V. Abrosimov, M. L. W. Thewalt, C. R. Pidgeon, and B. N. Murdin
Phys. Rev. B 96, 155204 – Published 9 October 2017

Abstract

We present results for the lifetime of the orbital transitions of Bi donors in Si, measured using both frequency-domain and time-domain techniques, allowing us to distinguish between homogeneous and inhomogeneous processes. The proximity of the energy of the optically allowed transitions to the optical phonon energy means that there is an unusually wide variation in the lifetimes and broadening mechanisms for this impurity, from fully homogeneous lifetime-broadened transitions to fully inhomogeneously broadened lines. The relaxation lifetime (T1) of the states ranges from the low 10's to 100's of ps, and we find that there is little extra dephasing (so that T1 is of the order of T2/2) in each case.

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  • Received 21 July 2017
  • Revised 12 September 2017

DOI:https://doi.org/10.1103/PhysRevB.96.155204

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

N. Stavrias, K. Saeedi, and B. Redlich

  • Radboud University, Institute for Molecules and Materials, FELIX Laboratory, Toernooiveld 7c, 6525 ED Nijmegen, The Netherlands

P. T. Greenland

  • London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, UK

H. Riemann and N. V. Abrosimov

  • Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany

M. L. W. Thewalt

  • Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada

C. R. Pidgeon

  • Institute of Photonics and Quantum Science, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, UK

B. N. Murdin*

  • Advanced Technology Institute and SEPNet, University of Surrey, Guildford, Surrey GU2 7XH, UK

  • *b.murdin@surrey.ac.uk

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Issue

Vol. 96, Iss. 15 — 15 October 2017

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