Li-intercalated graphene on SiC(0001): An STM study

Sara Fiori, Yuya Murata, Stefano Veronesi, Antonio Rossi, Camilla Coletti, and Stefan Heun
Phys. Rev. B 96, 125429 – Published 20 September 2017

Abstract

We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of lithium on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si face of SiC. At room temperature, Li immediately intercalates at the interface between the SiC substrate and the buffer layer and transforms the buffer layer into a quasi-free-standing graphene. This conclusion is substantiated by LEED and STM evidence. We show that intercalation occurs through the SiC step sites or graphene defects. We obtain good quantitative agreement between the number of Li atoms deposited and the number of available Si bonds at the surface of the SiC crystal. Through STM analysis, we are able to determine the interlayer distance induced by Li intercalation at the interface between the SiC substrate and the buffer layer.

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  • Received 5 June 2017
  • Revised 7 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.125429

©2017 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sara Fiori1, Yuya Murata1, Stefano Veronesi1, Antonio Rossi1,2, Camilla Coletti2, and Stefan Heun1,*

  • 1NEST, Istituto Nanoscienze–CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
  • 2Center for Nanotechnology Innovation @ NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy

  • *stefan.heun@nano.cnr.it

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Issue

Vol. 96, Iss. 12 — 15 September 2017

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