Electronic structure of the surface unoccupied band of Ge(001)-c(4×2): Direct imaging of surface electron relaxation pathways

J. Kanasaki, I. Yamamoto, J. Azuma, and S. Fukatsu
Phys. Rev. B 96, 115301 – Published 1 September 2017

Abstract

We have studied the electronic structure of the surface unoccupied band (SUB) of clean Ge(001)-c(4×2), with high energy and momentum resolution, by means of time- and angle-resolved two-photon photoelectron spectroscopy. The time evolution of photoelectron intensity images, measured as functions of energy and emission angle after photoexcitation with laser pulses (1.5 eV, 200 fs), provides a momentum space view of the relaxation pathways of surface excited electrons toward the bottom of the SUB. Surface excited electrons relax in several picoseconds along the strongly dispersive directions (Γ¯J¯ and Γ¯J2¯) and then accumulate near the band bottom. Taking into account the ultrafast change of surface potential, possibly due to the spatial redistribution of nonthermal carriers generated by photoexcitation, an energy width of 0.22 eV was determined as the surface band gap, as well as the surface dispersion properties along three high-symmetry directions.

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  • Received 9 May 2017
  • Revised 11 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.115301

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Kanasaki*

  • The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan

I. Yamamoto and J. Azuma

  • Synchrotron Light Application Center, Saga University, Yayoigaoka 8-7, Tosu, Saga 841-0005, Japan

S. Fukatsu

  • Graduate School of Arts and Sciences, University of Tokyo, Komaba 3-8-1, Meguro, Tokyo 153–8902, Japan

  • *Corresponding author: kanasaki@sanken.osaka-u.ac.jp

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Issue

Vol. 96, Iss. 11 — 15 September 2017

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