Spin and charge excitations in artificial hole- and electron-doped infinite layer cuprate superconductors

G. Dellea, M. Minola, A. Galdi, D. Di Castro, C. Aruta, N. B. Brookes, C. J. Jia, C. Mazzoli, M. Moretti Sala, B. Moritz, P. Orgiani, D. G. Schlom, A. Tebano, G. Balestrino, L. Braicovich, T. P. Devereaux, L. Maritato, and G. Ghiringhelli
Phys. Rev. B 96, 115117 – Published 11 September 2017

Abstract

The asymmetry between electron and hole doping in high critical-temperature superconducting (HTS) cuprates is key information for the understanding of Cooper pair formation mechanisms. Despite intensive studies on different cuprates, a comprehensive description of related magnetic and charge excitations is still fragmentary. In the present work, artificial cuprates were used to cover the entire phase diagram within the same HTS family. In particular, Cu L3-edge resonant inelastic x-ray scattering (RIXS) measurements were performed on artificial n- and p-type infinite layer (IL) epitaxial films. Beside several similarities, RIXS spectra show noticeable differences in the evolution, with doping level, of magnetic and charge intensity and damping. Compatible trends can be found in spectra measured on bulk cuprates, as well as in theoretical calculations of the spin dynamical structure factor S(q,ω). The findings give a deeper insight into the evolution of collective excitations across the cuprate phase diagram, and on underlying general features, only connected to the doping type. Moreover, they pave the way to the exploration of general properties of HTS physics over a broad range of conditions, by means of artificial compounds not constrained by the thermodynamic limitations governing the chemical stability of bulk materials.

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  • Received 30 April 2017
  • Revised 20 August 2017

DOI:https://doi.org/10.1103/PhysRevB.96.115117

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

G. Dellea1, M. Minola1,*, A. Galdi2,†, D. Di Castro3, C. Aruta3, N. B. Brookes4, C. J. Jia5, C. Mazzoli1,‡, M. Moretti Sala4, B. Moritz5, P. Orgiani6, D. G. Schlom7, A. Tebano3, G. Balestrino3, L. Braicovich1, T. P. Devereaux5, L. Maritato6, and G. Ghiringhelli1,§

  • 1CNR-SPIN and Dipartimento di Fisica, Politecnico di Milano, piazza Leonardo Da Vinci 32, Milano, I-20133, Italy
  • 2CNR-SPIN and Dipartimento di Ingegneria dell'Informazione, Ingegneria Elettrica e Matematica Applicata-DIEM, Università di Salerno, I-84084 Fisciano (SA), Italy
  • 3CNR-SPIN and Dipartimento di Ingegneria Civile e Ingegneria Informatica, Università di Roma Tor Vergata, Via del Politecnico 1, I-00133 Roma, Italy
  • 4European Synchrotron Radiation Facility, 71 Avenue des Martyrs, Grenoble F-38043, France
  • 5Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory and Stanford University, Menlo Park, California 94025, USA
  • 6Dipartimento di Ingegneria Industriale-DIIN, Università di Salerno and CNR-SPIN, I-84084 Fisciano (SA), Italy
  • 7Department of Materials Science and Engineering, Cornell University and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA

  • *Present address: Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany.
  • agaldi@unisa.it
  • Present address: National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA.
  • §giacomo.ghiringhelli@polimi.it

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Issue

Vol. 96, Iss. 11 — 15 September 2017

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