Hydrostatic pressure effect on the transport properties in TiO superconducting thin films

X. Liu, C. Zhang, F. X. Hao, T. Y. Wang, Y. J. Fan, Y. W. Yin, and X. G. Li
Phys. Rev. B 96, 104505 – Published 5 September 2017

Abstract

The superconducting properties of the TiO epitaxial thin films were systematically investigated under hydrostatic pressures (P) up to 2.13 GPa. At ambient pressure, the normal state resistivity increases with decreasing temperature, and steeply increases below Tkink115K. With further reducing temperature to Tc5.99K, the thin film enters into a superconducting state. Interestingly, the superconducting temperature Tc gradually decreases upon increasing P, and the decreasing rate of Tc with P is much larger than the McMillan theoretical expectation. In contrast, Tkink increases with P and a remarkable resistivity enhancement was observed in the temperature range between Tkink and Tc. The variations of Tc,Tkink, and normal state resistivity under high pressure may be induced by the charge localization related to the atomic vacancies rearrangement in TiO thin film. Furthermore, the temperature dependencies of the upper critical field Hc2(T) indicate that both the orbital and Pauli-paramagnetic pair-breaking effects should be taken into account. Finally, the thermally activated flux flow investigations under different pressures suggest that the pressure will suppress the thermal activate energy.

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  • Received 14 March 2017

DOI:https://doi.org/10.1103/PhysRevB.96.104505

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

X. Liu1, C. Zhang1, F. X. Hao1, T. Y. Wang1, Y. J. Fan1, Y. W. Yin1,*, and X. G. Li1,2,3,*

  • 1Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 2Key Laboratory of Materials Physics, Institute of Solid State Physics, CAS, Hefei 230026, China
  • 3Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

  • *Corresponding authors: lixg@ustc.edu.cn; yyw@ustc.edu.cn

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Vol. 96, Iss. 10 — 1 September 2017

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