Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, and S. D. Baranovskii
Phys. Rev. B 96, 035204 – Published 21 July 2017

Abstract

Using analytical arguments and computer simulations, we show that the dependence of the hopping carrier mobility on the electric field μ(F)/μ(0) in a system of random sites is determined by the localization length a, and not by the concentration of sites N. This result is in drastic contrast to what is usually assumed in the literature for a theoretical description of experimental data and for device modeling, where N1/3 is considered as the decisive length scale for μ(F). We show that although the limiting value μ(F0) is determined by the ratio N1/3/a, the dependence μ(F)/μ(0) is sensitive to the magnitude of a, and not to N1/3. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field F and the real temperature T on the hopping transport via spatially random sites can contain the electric field only in the combination eFa.

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  • Received 12 December 2016
  • Revised 26 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.035204

©2017 American Physical Society

Physics Subject Headings (PhySH)

Polymers & Soft MatterCondensed Matter, Materials & Applied Physics

Authors & Affiliations

A. V. Nenashev1,2, J. O. Oelerich3, A. V. Dvurechenskii1,2, F. Gebhard3, and S. D. Baranovskii3

  • 1Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
  • 2Department of Physics, Novosibirsk State University, 630090 Novosibirsk, Russia
  • 3Department of Physics and Material Sciences Center, Philipps-University, D-35032 Marburg, Germany

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Issue

Vol. 96, Iss. 3 — 15 July 2017

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