Abstract
The recent experimental realization of high-quality leads to the possibility of an efficient manipulation of its spin and valley degrees of freedom. Its electronic properties comprise a huge spin-orbit coupling, a direct band gap, and a strong anisotropic lifting of the degeneracy of the valley degree of freedom in a magnetic field. We evaluate its band structure and study ballistic electron transport through single and double junctions (or barriers) on monolayer in the presence of spin and valley Zeeman fields and of an electric potential . The conductance versus the field or decreases in a fluctuating manner. For a single junction, the spin and valley polarizations rise with , reach a value of more than , and become perfect above meV while for a double junction this change can occur for meV and meV. In certain regions of the plane becomes perfect. The conductance , its spin-up and spin-down components, and both polarizations oscillate with the barrier width . The ability to isolate various carrier degrees of freedom in may render it a promising candidate for new spintronic and valleytronic devices.
4 More- Received 25 March 2017
DOI:https://doi.org/10.1103/PhysRevB.95.235402
©2017 American Physical Society