Abstract
We present a theoretical investigation of the single-electron electronic structure of polyatomic phosphorus donor molecular planar structures embedded in silicon. Using an effective mass theory and multivalley envelope function representation, the effect of the valley-orbit coupling is systematically analyzed in such systems. The valley composition of the single-electron states strongly depends on the geometry of the dopant molecule and on its orientation relative to the crystallographic axes. The electron binding energy of a triatomic linear molecule is larger than that of a diatomic one oriented along the same crystallographic axis, but the energy gap between the ground state and the first excited state is not significantly different for internuclear distances from 1.5 to 6.6 nm. Three donor atoms arranged in a triangle geometry have larger binding energies than a triatomic linear chain of dopants with the same internuclear distance. Planar donor molecules are characterized by a strong polarization in favor of the valleys oriented perpendicular to the molecular plane, an effect that increases with the number of atoms in the molecule and is not present in diatomics. As a result, the amplitude of the in-plane wave function oscillations caused by the valley interference decreases which reduces the sensitivity of the electronic states to random displacements of dopants. The effect of weak spatial disorder and of the molecular orientation relative to the crystallographic axes are studied in detail for a hexagonal structure. The valley properties that we characterize are fundamental for the implementation of robust multiqubits systems on many-body states of interacting dopants.
2 More- Received 19 November 2016
- Revised 28 January 2017
DOI:https://doi.org/10.1103/PhysRevB.95.205301
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