Thickness-tuned transition of band topology in ZrTe5 nanosheets

Jianwei Lu, Guolin Zheng, Xiangde Zhu, Wei Ning, Hongwei Zhang, Jiyong Yang, Haifeng Du, Kun Yang, Haizhou Lu, Yuheng Zhang, and Mingliang Tian
Phys. Rev. B 95, 125135 – Published 29 March 2017

Abstract

We report thickness-tuned electrical transport in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets with thickness down to 10 nm. We find that the resistivity peak temperature T* can be significantly tuned by the nanosheet thickness. When the thickness is reduced from 160 to 40 nm, T* reduces systematically from 145 to 100 K. However, with the thickness further reducing to 10 nm, T* shifts up to a higher temperature. From our analysis, the system transitions from a topological semimetal with two types of carriers to a single band with conventional hole carriers when the thickness is less than 40 nm. Furthermore, by tracking the thickness dependence of the carrier density, we find that the Fermi level shifts continuously downward from the conduction band to the valence band with decreasing the thickness. Our experiment reveals a thickness-tuned transition of band topology in ZrTe5 nanosheets which may be helpful for the understanding of the contrast observations in this material.

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  • Received 8 November 2016
  • Revised 6 March 2017

DOI:https://doi.org/10.1103/PhysRevB.95.125135

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jianwei Lu1,2, Guolin Zheng1,2, Xiangde Zhu1, Wei Ning1,3,*, Hongwei Zhang1,2, Jiyong Yang1, Haifeng Du1,3, Kun Yang4, Haizhou Lu5, Yuheng Zhang1,2,3, and Mingliang Tian1,2,3,*

  • 1High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, China
  • 2Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 3Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 4National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306-4005, USA
  • 5Department of Physics, South University of Science and Technology of China, Shenzhen 518055, China

  • *Author to whom correspondence should be addressed: ningwei@hmfl.ac.cn; tianml@hmfl.ac.cn

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Issue

Vol. 95, Iss. 12 — 15 March 2017

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