Doping effects on the hybridization gap and antiferromagnetic order in the Kondo semiconductor CeOs2Al10 studied by break-junction experiments

J. Kawabata, T. Ekino, Y. Yamada, Y. Okada, A. Sugimoto, Y. Muro, and T. Takabatake
Phys. Rev. B 95, 035144 – Published 25 January 2017

Abstract

The Kondo semiconductors CeT2Al10 (T=Ru and Os) exhibit antiferromagnetic (AFM) orders at unexpectedly high temperatures TN=27.0 and 28.5 K, respectively, whose mechanism remains in debate. We report the break-junction experiments on 4f/5d-hole and 5d-electron doped CeOs2Al10 as well as nondoped CeRu2Al10. The differential conductance spectra dI/dV for T=Os and Ru show three gap structures; two hybridization gaps V1, V2 and an AFM gap VAF, whose magnitudes for T=Os are 1550% larger than for T=Ru. Doping of 4f/5d holes and 5d electrons in CeOs2Al10 changes the dI/dV spectrum in very different ways. Nevertheless, in all cases, the suppression of V1 is well correlated with those of VAF and TN. Furthermore, the zero-bias conductance decreases on cooling below T* (>TN) only in the doping region where V1 and VAF coexist. This fact indicates that the unusual AFM order is preceded by the decrease in the density of states in the presence of V1.

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  • Received 29 October 2016
  • Revised 5 January 2017

DOI:https://doi.org/10.1103/PhysRevB.95.035144

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Kawabata1, T. Ekino2, Y. Yamada1, Y. Okada1, A. Sugimoto2, Y. Muro3, and T. Takabatake1,4,*

  • 1Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
  • 2Graduate School of Integrated Arts and Sciences, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
  • 3Liberal Arts and Sciences, Faculty of Engineering, Toyama Prefectural University, Izumi 939-0398, Japan
  • 4Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan

  • *Corresponding author: takaba@hiroshima-u.ac.jp

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Vol. 95, Iss. 3 — 15 January 2017

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