Electric-field-driven Mott metal-insulator transition in correlated thin films: An inhomogeneous dynamical mean-field theory approach

P. Bakalov, D. Nasr Esfahani, L. Covaci, F. M. Peeters, J. Tempere, and J.-P. Locquet
Phys. Rev. B 93, 165112 – Published 8 April 2016

Abstract

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, a local density approximation (LDA) is considered in which the particle density n, quasiparticle residue Z, and spectral weight at the Fermi level A(ω=0) of each layer are approximated by a homogeneous bulk environment. A systematic comparison between the two approaches reveals that the less expensive LDA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. LDA values for n are overall more reliable than those for Z and A(ω=0). The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

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  • Received 23 February 2015
  • Revised 16 March 2016

DOI:https://doi.org/10.1103/PhysRevB.93.165112

©2016 American Physical Society

Authors & Affiliations

P. Bakalov1,*, D. Nasr Esfahani2,3,†, L. Covaci2,‡, F. M. Peeters2,§, J. Tempere4,¶, and J.-P. Locquet1,**

  • 1Departement Natuurkunde en Sterrenkunde, KULeuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
  • 2Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 3Condensed Matter National Laboratory, Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran
  • 4Departement Fysica, Universiteit Antwerpen, Universiteitsplein 1, B-2610 Wilrijk, Belgium

  • *petar.bakalov@fys.kuleuven.be
  • Davoud.NasrEsfahani@uantwerpen.be
  • lucian@covaci.org
  • §Francois.Peeters@uantwerpen.be
  • jacques.tempere@uantwerpen.be
  • **jeanpierre.locquet@fys.kuleuven.be

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Issue

Vol. 93, Iss. 16 — 15 April 2016

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