• Rapid Communication

Helicity-protected ultrahigh mobility Weyl fermions in NbP

Zhen Wang, Yi Zheng, Zhixuan Shen, Yunhao Lu, Hanyan Fang, Feng Sheng, Yi Zhou, Xiaojun Yang, Yupeng Li, Chunmu Feng, and Zhu-An Xu
Phys. Rev. B 93, 121112(R) – Published 28 March 2016
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Abstract

Noncentrosymmetric transition-metal monopnictides, including TaAs, TaP, NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exotic relativistic Weyl fermions. In this Rapid Communication, we elucidate the physical origin of the unprecedented charge carrier mobility of NbP, which can reach 1×107cm2V1s1 at 1.5 K. Angle- and temperature-dependent quantum oscillations, supported by density function theory calculations, reveal that NbP has the coexistence of p- and n-type WSM pockets in the kz=1.16π/c plane (W1-WSM) and in the kz=0 plane near the high symmetry points Σ (W2-WSM), respectively. Uniquely, each W2-WSM pocket forms a large dumbbell-shaped Fermi surface enclosing two neighboring Weyl nodes with the opposite chirality. The magnetotransport in NbP is dominated by these highly anisotropic W2-WSM pockets, in which Weyl fermions are well protected from defect backscattering by real spin conservation associated to the chiral nodes. However, with a minimal doping of 1% Cr, the mobility of NbP is degraded by more than two orders of magnitude, due to the invalidity of helicity protection to magnetic impurities. Helicity protected Weyl fermion transport is also manifested in chiral anomaly induced negative magnetoresistance, controlled by the W1-WSM states. In the quantum regime below 10 K, the intervalley scattering time by impurities becomes a large constant, producing the sharp and nearly identical conductivity enhancement at low magnetic field.

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  • Received 20 June 2015
  • Revised 21 December 2015

DOI:https://doi.org/10.1103/PhysRevB.93.121112

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhen Wang1,2, Yi Zheng1,3,4,*, Zhixuan Shen1, Yunhao Lu2, Hanyan Fang1, Feng Sheng1, Yi Zhou1,4, Xiaojun Yang1, Yupeng Li1, Chunmu Feng1, and Zhu-An Xu1,2,3,4,†

  • 1Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
  • 2State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
  • 3Zhejiang California International NanoSystems Institute, Zhejiang University, Hangzhou 310058, People's Republic of China
  • 4Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, People's Republic of China

  • *phyzhengyi@zju.edu.cn
  • zhuan@zju.edu.cn

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Issue

Vol. 93, Iss. 12 — 15 March 2016

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