An artificial Rb atom in a semiconductor with lifetime-limited linewidth

Jan-Philipp Jahn, Mathieu Munsch, Lucas Béguin, Andreas V. Kuhlmann, Martina Renggli, Yongheng Huo, Fei Ding, Rinaldo Trotta, Marcus Reindl, Oliver G. Schmidt, Armando Rastelli, Philipp Treutlein, and Richard J. Warburton
Phys. Rev. B 92, 245439 – Published 28 December 2015

Abstract

We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency matched to the Rb D2 transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.42 GHz) with both resonant and nonresonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible dephasing of the QD excitonic transition. We therefore demonstrate significant progress towards the realization of an ideal solid-state source of single photons at a key wavelength for quantum technologies.

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  • Received 12 May 2015
  • Revised 25 August 2015
  • Corrected 22 March 2016

DOI:https://doi.org/10.1103/PhysRevB.92.245439

©2015 American Physical Society

Corrections

22 March 2016

Erratum

Publisher's Note: An artificial Rb atom in a semiconductor with lifetime-limited linewidth [Phys. Rev. B 92, 245439 (2015)]

Jan-Philipp Jahn, Mathieu Munsch, Lucas Béguin, Andreas V. Kuhlmann, Martina Renggli, Yongheng Huo, Fei Ding, Rinaldo Trotta, Marcus Reindl, Oliver G. Schmidt, Armando Rastelli, Philipp Treutlein, and Richard J. Warburton
Phys. Rev. B 93, 159905 (2016)

Authors & Affiliations

Jan-Philipp Jahn1, Mathieu Munsch1,*, Lucas Béguin1, Andreas V. Kuhlmann1, Martina Renggli1, Yongheng Huo2, Fei Ding3, Rinaldo Trotta2, Marcus Reindl2, Oliver G. Schmidt3, Armando Rastelli2, Philipp Treutlein1, and Richard J. Warburton1

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 2Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
  • 3Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany

  • *Corresponding author: mathieu.munsch@unibas.ch

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Issue

Vol. 92, Iss. 24 — 15 December 2015

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