Improved predictions of the physical properties of Zn- and Cd-based wide band-gap semiconductors: A validation of the ACBN0 functional

Priya Gopal, Marco Fornari, Stefano Curtarolo, Luis A. Agapito, Laalitha S. I. Liyanage, and Marco Buongiorno Nardelli
Phys. Rev. B 91, 245202 – Published 4 June 2015
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Abstract

We study the physical properties of ZnX (X = O, S, Se, Te) and CdX (X = O, S, Se, Te) in the zinc-blende, rock-salt, and wurtzite structures using the recently developed fully ab initio pseudohybrid Hubbard density functional ACBN0. We find that both the electronic and vibrational properties of these wide band-gap semiconductors are systematically improved over the PBE values and reproduce closely the experimental measurements. Similar accuracy is found for the structural parameters, especially the bulk modulus. ACBN0 results compare well with hybrid functional calculations at a fraction of the computational cost.

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  • Received 26 February 2015
  • Revised 1 May 2015

DOI:https://doi.org/10.1103/PhysRevB.91.245202

©2015 American Physical Society

Authors & Affiliations

Priya Gopal1,2, Marco Fornari1,2,*, Stefano Curtarolo2,3, Luis A. Agapito2,4, Laalitha S. I. Liyanage2,4, and Marco Buongiorno Nardelli2,4,†

  • 1Department of Physics, Central Michigan University, Mt. Pleasant, Michigan 48859, USA
  • 2Center for Materials Genomics, Duke University, Durham, North Carolina 27708, USA
  • 3Materials Science, Electrical Engineering, Physics and Chemistry, Duke University, Durham, North Carolina 27708, USA
  • 4Department of Physics, University of North Texas, Denton, Texas 76203, USA

  • *marco.fornari@cmich.edu
  • mbn@unt.edu

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Issue

Vol. 91, Iss. 24 — 15 June 2015

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