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Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2

Drew W. Latzke, Wentao Zhang, Aslihan Suslu, Tay-Rong Chang, Hsin Lin, Horng-Tay Jeng, Sefaattin Tongay, Junqiao Wu, Arun Bansil, and Alessandra Lanzara
Phys. Rev. B 91, 235202 – Published 11 June 2015

Abstract

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS2, resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our results provide an important reference for future studies of electronic properties of MoS2 and WS2 and their applications in spintronics and valleytronics devices.

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  • Received 23 January 2015
  • Revised 7 May 2015

DOI:https://doi.org/10.1103/PhysRevB.91.235202

©2015 American Physical Society

Authors & Affiliations

Drew W. Latzke1,2, Wentao Zhang2,3, Aslihan Suslu4, Tay-Rong Chang5, Hsin Lin6,7, Horng-Tay Jeng5,8, Sefaattin Tongay4, Junqiao Wu2,9, Arun Bansil10, and Alessandra Lanzara2,3,*

  • 1Applied Science and Technology, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Department of Physics, University of California, Berkeley, California 94720, USA
  • 4School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA
  • 5Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
  • 6Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546
  • 7Department of Physics, National University of Singapore, Singapore 117542
  • 8Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
  • 9Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 10Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA

  • *Author to whom correspondence should be addressed: alanzara@lbl.gov

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Vol. 91, Iss. 23 — 15 June 2015

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