Charge recombination in undoped cuprates

Zala Lenarčič and Peter Prelovšek
Phys. Rev. B 90, 235136 – Published 22 December 2014

Abstract

We theoretically analyze the process of charge recombination in the planar Mott-Hubbard insulators with the aim to explain the short picosecond-range lifetimes of photoexcited carriers, experimentally studied via pump-probe experiments on the undoped cuprates. The recombination mechanism consists of two essential ingredients: the formation of a metastable s-type bound holon-doublon pair, i.e., the Mott exciton, and the decay of such an excitonic state via the multimagnon emission. In spite of the large gap that requires many bosons to be emitted, the latter process is fast due to a large exchange scale and strong charge-spin coupling in planar systems. As the starting microscopic model we consider the single-band Hubbard model and then a more realistic three-band model for cuprates, both leading to the same minimal one. The decay rate of the exciton is evaluated numerically via the Fermi golden rule, having consistency also with the direct time-evolution calculation. The decay rate reveals exponential dependence on the ratio of the Mott-Hubbard gap and the exchange coupling, the result qualitatively reproduced also within a toy exciton-boson model.

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  • Received 8 September 2014
  • Revised 16 October 2014

DOI:https://doi.org/10.1103/PhysRevB.90.235136

©2014 American Physical Society

Authors & Affiliations

Zala Lenarčič1 and Peter Prelovšek1,2

  • 1J. Stefan Institute, SI-1000 Ljubljana, Slovenia
  • 2Faculty of Mathematics and Physics, University of Ljubljana, SI-1000 Ljubljana, Slovenia

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Issue

Vol. 90, Iss. 23 — 15 December 2014

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