Energetic and vibrational analysis of hydrogenated silicon m vacancies above saturation

S. Alireza Ghasemi, Thomas J. Lenosky, Maximilian Amsler, Ali Sadeghi, Luigi Genovese, and Stefan Goedecker
Phys. Rev. B 90, 054117 – Published 27 August 2014

Abstract

We present a systematic study on hydrogenated silicon m vacancies above saturation. For each system a global geometry optimization search for low-lying local minima is performed using a newly developed SiH tight binding model. Subsequently a large number of low-energy structures are examined by density functional calculations using a minimal basis set. Finally the energetically favorable structures are reexamined using a systematically extendable basis set with local, semilocal, and hybrid exchange-correlation functionals. Particular attention is paid to the divacancy to which the Raman peak at 3822 cm1 associated with the H2 molecule had previously been assigned. Both the energetics and vibrational analysis of divacancy-related stable configurations suggest a revision of the above conclusion.

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  • Received 18 March 2014
  • Revised 11 August 2014

DOI:https://doi.org/10.1103/PhysRevB.90.054117

©2014 American Physical Society

Authors & Affiliations

S. Alireza Ghasemi1,*, Thomas J. Lenosky2, Maximilian Amsler3, Ali Sadeghi3, Luigi Genovese4, and Stefan Goedecker3

  • 1Institute for Advanced Studies in Basic Sciences, P.O. Box 45195-1159, IR-Zanjan, Iran
  • 21974 Kirby Way, San Jose California 95124-1324, USA
  • 3Department of Physics, Universität Basel, Klingelbergstr. 82, CH-4056 Basel, Switzerland
  • 4Université Grenoble Alpes, CEA, INAC-SP2M, L_Sim, F-38000 Grenoble, France

  • *aghasemi@iasbs.ac.ir

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Issue

Vol. 90, Iss. 5 — 1 August 2014

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