Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

Y. C. Cheng, Q. Y. Zhang, and U. Schwingenschlögl
Phys. Rev. B 89, 155429 – Published 28 April 2014

Abstract

We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.

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  • Received 2 December 2013
  • Revised 11 April 2014

DOI:https://doi.org/10.1103/PhysRevB.89.155429

©2014 American Physical Society

Authors & Affiliations

Y. C. Cheng*, Q. Y. Zhang, and U. Schwingenschlögl

  • PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia

  • *Yingchun.Cheng@kaust.edu.sa
  • Udo.Schwingenschlogl@kaust.edu.sa

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Issue

Vol. 89, Iss. 15 — 15 April 2014

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