Abstract
We studied the single-layered iridate with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.
- Received 22 August 2012
- Revised 13 December 2013
DOI:https://doi.org/10.1103/PhysRevB.89.085125
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