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Weak localization effects as evidence for bulk quantization in Bi2Se3 thin films

Li Zhang, Merav Dolev, Qi I. Yang, Robert H. Hammond, Bo Zhou, Alexander Palevski, Yulin Chen, and Aharon Kapitulnik
Phys. Rev. B 88, 121103(R) – Published 16 September 2013

Abstract

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultrathin films of the topological insulator Bi2Se3 and show that in the two-dimensional quantum limit, in which the topological insulator bulk becomes quantized, an additional negative magnetoresistance feature appears. Detailed analysis associates this feature with weak localization of the quantized bulk channels, thus providing evidence for this quantization. Examination of the dephasing fields at different temperatures indicates different scattering mechanism in the bulk vs the surface states.

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  • Received 5 July 2013

DOI:https://doi.org/10.1103/PhysRevB.88.121103

©2013 American Physical Society

Authors & Affiliations

Li Zhang1,2, Merav Dolev1,2, Qi I. Yang2,3, Robert H. Hammond2, Bo Zhou3,4,5, Alexander Palevski6, Yulin Chen3,4,5, and Aharon Kapitulnik1,2,3

  • 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA
  • 2Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  • 3Department of Physics, Stanford University, Stanford, California 94305, USA
  • 4Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
  • 5Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 6School of Physics and Astronomy, Tel Aviv University, 69978 Tel Aviv, Israel

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Issue

Vol. 88, Iss. 12 — 15 September 2013

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