Epitaxial strain effect on transport properties in Ca2xSrxRuO4 thin films

Ludi Miao, Wenyong Zhang, Punam Silwal, Xiaolan Zhou, Ilan Stern, Tijiang Liu, Jin Peng, Jin Hu, Dae Ho Kim, and Z. Q. Mao
Phys. Rev. B 88, 115102 – Published 3 September 2013

Abstract

We have grown Ca2xSrxRuO4 (x = 0, 0.1, 0.5, and 2) epitaxial thin films using a pulsed laser deposition method and characterized their structures and magnetotransport properties. We find that the x = 0, 0.1, and 0.5 films grown on LaAlO3 substrates exhibit coherent strain with tetragonal structure. The nature of strain is dependent on Sr content: the Ca2RuO4 (x = 0) film features biaxial compressive strain, while the x = 0.5 film shows biaxial tensile strain. The strain in the x = 0.1 film is relatively weak and strongly anisotropic, with compressive strain along the a axis and tensile strain along the b axis. In contrast, the Sr2RuO4 films show strain relaxation. The epitaxial strain effect leads the properties of the x=0, 0.1, and 0.5 films to be distinct from those of bulk materials. The bulk material shows antiferromagnetic Mott-insulating properties for x < 0.2 and a nearly ferromagnetic state for x ∼ 0.5 [Nakatsuji and Maeno, Phys. Rev. Lett. 84, 2666 (2000)], whereas the film displays itinerant ferromagnetism for x = 0 and 0.1 and paramagnetic metal for x = 0.5. Furthermore, in the x = 0 and 0.1 films, we observed distinct fourfold ferromagnetic anisotropy, with the minimum magnetoresistivity along the diagonal directions for x = 0 and a and b directions for x = 0.1. Such evolution of magnetic anisotropy may be associated with the tuning of the spin-orbit coupling by the epitaxial strain.

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  • Received 15 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.115102

©2013 American Physical Society

Authors & Affiliations

Ludi Miao, Wenyong Zhang, Punam Silwal, Xiaolan Zhou, Ilan Stern, Tijiang Liu, Jin Peng, Jin Hu, Dae Ho Kim, and Z. Q. Mao*

  • Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA

  • *Author to whom correspondence should be addressed: zmao@tulane.edu

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Vol. 88, Iss. 11 — 15 September 2013

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