Abstract
The deformation potentials , , , , and are determined for random AlGaN and InGaN alloys using electronic band structure calculations based on the density functional theory. A sublinear composition dependence is obtained for and in AlGaN, and in InGaN, whereas superlinear behavior on composition is found for , , and in AlGaN, and and in InGaN. The optical polarization properties of nitride quantum wells are very well described by the k·p method when the obtained deformation potentials are included. In -plane AlGaN/AlN and InGaN/GaN quantum wells, the difference between the interband transition energies for light polarized parallel and orthogonal to the crystalline axis compares more favorably to experimental data, than when deformation potentials previously reported in literature are used.
- Received 5 April 2013
DOI:https://doi.org/10.1103/PhysRevB.88.081202
©2013 American Physical Society